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INTEGRATED CIRCUITS
DATA SHEET
UAA2073AM Image rejecting front-end for GSM applications
Product specification Supersedes data of 1996 Oct 23 File under Integrated Circuits, IC17 1997 Jan 27
Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
FEATURES * Low-noise, wide dynamic range amplifier * Very low noise figure * Dual balanced mixer for at least 30 dB on-chip image rejection * IF I/Q combination network for 175 MHz * Down-conversion mixer for closed-loop transmitters * Independent TX/RX fast on/off power-down modes * Very small outline packaging * Very small application (no image filter). APPLICATIONS * 900 MHz front-end for GSM hand-portable equipment * Compact digital mobile communication equipment * TDMA receivers. GENERAL DESCRIPTION UAA2073AM contains both a receiver front-end and a high frequency transmit mixer intended for GSM (Global System for Mobile communications) cellular telephones. Designed in an advanced BiCMOS process it combines high performance with low power consumption and a high degree of integration, thus reducing external component costs and total front-end size. The main advantage of the UAA2073AM is its ability to provide over 30 dB of image rejection. Consequently, the image filter between the LNA and the mixer is suppressed and the duplexer design is eased, compared with a conventional front-end design. ORDERING INFORMATION TYPE NUMBER UAA2073AM PACKAGE NAME DESCRIPTION
UAA2073AM
Image rejection is achieved in the internal architecture by two RF mixers in quadrature and two all-pass filters in I and Q IF channels that phase shift the IF by 45 and 135 respectively. The two phase shifted IFs are recombined and buffered to furnish the IF output signal. This means that signals presented at the RF input at LO - IF frequency are rejected through this signal processing while signals at LO + IF frequency can form the IF signal. The receiver section consists of a low-noise amplifier that drives a quadrature mixer pair. The IF amplifier has on-chip 45 and 135 phase shifting and a combining network for image rejection.The IF driver has differential open-collector type outputs. The LO part consists of an internal all-pass type phase shifter to provide quadrature LO signals to the receive mixers. The all-pass filters outputs are buffered before being fed to the receive mixers. The transmit section consists of a down-conversion mixer and a transmit IF driver stage. In the transmit mode an internal LO buffer is used to drive the transmit IF down-conversion mixer. All RF and IF inputs or outputs are balanced to reduce EMC issues. Fast power-up switching is possible. A synthesizer-on (SX) mode enables LO buffers independent of the other circuits. When SXON pin is HIGH, all internal buffers on the LO path of the circuit are turned on, thus minimizing LO pulling when remainder of receive chain is powered-up.
VERSION SOT266-1
SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm
1997 Jan 27
2
Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
QUICK REFERENCE DATA Note 1. SYMBOL VCC ICC(RX) ICC(TX) NFRX GCPRX IR Tamb Note 1. For conditions see Chapters "DC characteristics" and "AC characteristics". BLOCK DIAGRAM supply voltage receive supply current transmit supply current noise figure on demonstration board (including matching and PCB losses) conversion power gain image frequency rejection operating ambient temperature PARAMETER MIN. 3.6 21 9 - 19 30 -30 TYP. 3.75 26 12 3.6 22 45 +25
UAA2073AM
MAX. 5.3 32 15 4.7 25 - +75 V
UNIT mA mA dB dB dB C
handbook, full pagewidth
n.c. 2
n.c. 3
SBS
UAA2073AM
+45oC
1
VCC1
4 20 IFA
RFINA RFINB
5 6 LNA low-noise amplifier +135oC IF COMBINER 19 7
IFB
GND1
RECEIVE SECTION
VCC2 15 RX CURRENT REGULATORS TX IF LO 16 QUADRATURE PHASE SHIFTER
TRANSMIT SECTION
RXON TXON SXON
11 12 10
MIXER 14 13 TXOIFA TXOIFB
GND2
LOCAL OSCILLATOR SECTION
18
17 LOINB
9 TXINB
8
MGD149
LOINA
TXINA
Fig.1 Block diagram.
1997 Jan 27
3
Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
PINNING SYMBOL SBS n.c. n.c. VCC1 RFINA RFINB GND1 TXINA TXINB SXON RXON TXON TXOIFB TXOIFA VCC2 GND2 LOINB LOINA IFB IFA PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 DESCRIPTION sideband selection (should be grounded for fLO < fRF) not connected not connected supply voltage for receive and transmit sections RF input A (balanced) RF input B (balanced) ground 1 for receive and transmit sections transmit mixer input A (balanced) transmit mixer input B (balanced) hardware power-on of LO section (including buffers to RX and TX) hardware power-on for receive section and LO buffers to RX hardware power-on for transmit section and LO buffers to TX transmit mixer IF output B (balanced) transmit mixer IF output A (balanced) supply voltage for LO section ground 2 for LO section LO input B (balanced) LO input A (balanced) IF output B (balanced) IF output A (balanced)
handbook, halfpage
UAA2073AM
SBS 1 n.c. 2 n.c. 3 VCC1 4 RFINA 5
20 IFA 19 IFB 18 LOINA 17 LOINB 16 GND2
UAA2073AM
RFINB 6 GND1 7 TXINA 8 TXINB 9 SXON 10
MGD150
15 VCC2 14 TXOIFA 13 TXOIFB 12 TXON 11 RXON
Fig.2 Pin configuration.
1997 Jan 27
4
Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
FUNCTIONAL DESCRIPTION Receive section The circuit contains a low-noise amplifier followed by two high dynamic range mixers. These mixers are of the Gilbert-cell type. The whole internal architecture is fully differential. The local oscillator, shifted in phase to 45 and 135, mixes the amplified RF to create I and Q channels. The two I and Q channels are buffered, phase shifted by 45 and 135 respectively, amplified and recombined internally to realize the image rejection. Pin SBS allows sideband selection: * fLO > fRF (SBS = 1) * fLO < fRF (SBS = 0). Where fRF is the frequency of the wanted signal.
UAA2073AM
Balanced signal interfaces are used for minimizing crosstalk due to package parasitics. The RF differential input impedance is 150 (parallel real part), chosen to minimize current consumption at best noise performance. The IF output is differential and of the open-collector type, tuned for 175 MHz. Typical application will load the output with a 680 resistor load at each IF output, plus a 1 k load consisting in the input impedance of the IF filter or in the input impedance of the matching network for the IF filter. The power gain refers to the available power on this 1 k load. The path to VCC for the DC current should be achieved via tuning inductors. The output voltage is limited to VCC + 3Vbe or 3 diode forward voltage drops. Fast switching, on/off, of the receive section is controlled by the hardware input RXON.
handbook, full pagewidth
SBS IF amplifier +45o
VCC1
MIXER
IFA RFINA RFINB LNA GND1 IF amplifier +135o
MBH188
MIXER
IF COMBINER IFB
LOIN
RXON
Fig.3 Block diagram, receive section.
1997 Jan 27
5
Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
Local oscillator section The Local Oscillator (LO) input directly drives the two internal all-pass networks to provide quadrature LO to the receive mixers. The LO differential input impedance is 50 (parallel real part). A synthesizer-on (SX) mode is used to power-up the buffering on the LO inputs, minimizing the pulling effect on the external VCO when entering transmit or receive modes. This mode is active when the SXON input is HIGH. Table 1 shows status of circuit in accordance with TXON, RXON and SXON inputs. Transmit mixer
UAA2073AM
This mixer is used for down-conversion to the transmit IF. Its inputs are coupled to the transmit RF and down-convert it to a modulated transmit IF frequency which is phase locked with the baseband modulation. The transmit mixer provides a differential input at 200 and a differential output driver buffer for a 1 k load. The IF outputs are low impedance (emitter followers). Fast switching, on/off, of the transmit section is controlled by the hardware input TXON.
handbook, halfpage
to RX
handbook, halfpage
VCC2
TX MIXER LOIN
QUAD
MBH190
RXON TXON SXON
TXOIFA TXOIFB
GND2
to TX
MBH189
TXON
TXINB TXINA
LOINA
LOINB
Fig.4 Block diagram, LO section.
Fig.5 Block diagram, transmit mixer.
1997 Jan 27
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Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
Table 1 Control of power status EXTERNAL PIN LEVEL
UAA2073AM
CIRCUIT MODE OF OPERATION TXON LOW LOW HIGH LOW LOW HIGH HIGH HIGH RXON LOW HIGH LOW LOW HIGH LOW HIGH HIGH SXON LOW LOW LOW HIGH HIGH HIGH LOW HIGH power-down mode RX mode: receive section and LO buffers to RX on TX mode: transmit section and LO buffers to TX on SX mode: complete LO section on SRX mode: receive section on and SX mode active STX mode: transmit section on and SX mode active receive and transmit sections on; specification not guaranteed receive and transmit sections on; specification not guaranteed
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC GND Pi(max) Tj(max) Pdis(max) Tstg HANDLING Every pin withstands the ESD test in accordance with MIL-STD-883C class 2 (method 3015.5). THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient in free air VALUE 120 UNIT K/W supply voltage maximum power input maximum operating junction temperature maximum power dissipation in stagnant air IC storage temperature PARAMETER - - - - -65 difference in ground supply voltage applied between GND1 and GND2 - MIN. 9 0.6 +20 +150 250 +150 MAX. V V dBm C mW C UNIT
1997 Jan 27
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Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
DC CHARACTERISTICS VCC = 3.75 V; Tamb = 25 C; unless otherwise specified. SYMBOL Pins: VCC1 and VCC2 VCC ICC(RX) ICC(TX) ICC(SX) ICC(SRX) ICC(STX) ICC(PD) Vth VIH VIL IIH IIL VI(RFIN) IO(IF) VI(TXIN) VO(TXOIF) VI(LOIN) supply voltage supply current in RX mode supply current in TX mode supply current in SX mode supply current in SRX mode supply current in STX mode supply current in power-down mode over full temperature range 3.6 21 9 4.5 23 12.5 - - 0.7VCC -0.3 pin at VCC - 0.4 V pin at 0.4 V -1 -1 PARAMETER CONDITIONS MIN.
UAA2073AM
TYP.
MAX.
UNIT
3.75 26 12 5.8 28 15.0 0.01
5.3 32 15 7.0 34 19.5 50 - VCC 0.8 +1 +1
V mA mA mA mA mA A
Pins: SXON, RXON, TXON and SBS CMOS threshold voltage HIGH level input voltage LOW level input voltage HIGH level static input current LOW level static input current note 1 1.25 - - - - V V V A A
Pins: RFINA and RFINB DC input voltage level receive section on 2.0 2.2 2.4 V
Pins: IFA and IFB DC output current receive section on 2.3 3.0 3.8 mA
Pins: TXINA and TXINB DC input voltage level transmit section on 2.1 2.4 2.6 V
Pins: TXOIFA and TXOIFB DC output voltage level transmit section on 1.8 1.9 2.1 V
Pins: LOINA and LOINB DC input voltage level receive section on transmit section on Note 1. The referenced inputs should be connected to a valid CMOS input level. 2.3 2.3 2.5 2.5 2.8 2.8 V V
1997 Jan 27
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Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
AC CHARACTERISTICS VCC = 3.75 V; Tamb = -30 to +75 C; fIF = 175 MHz; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - -
UAA2073AM
TYP.
MAX. - -
UNIT pF
Receive section (receive section on) RiRX CiRX RF input resistance (real part of the parallel input impedance) RF input capacitance (imaginary part of the parallel input impedance) RF input frequency return loss on matched RF input conversion power gain note 1 differential RF input to differential IF output matched to 1 k differential note 2 note 2 interferer frequency offset 3 MHz note 1 note 2 note 2 RF input to differential IF output; note 3 Tamb = +25C over full temperature range RLRX CLRX foRX IR typical application IF output load impedance IF output load capacitance IF frequency range image frequency rejection fLO < fRF balanced unbalanced - - - - - 30 3.6 - 1000 - 175 45 4.0 4.7 - 2 - - dB dB pF MHz dB balanced; at 942.5 MHz balanced; at 942.5 MHz 150 1
fiRX RLiRX GCPRX
925 15 19
- 20 22
960 - 25
MHz dB dB
Grip G/T DES1 CP1RX IP2DRX IP3RX NFRX
gain ripple as a function of RF frequency gain variation with temperature 1 dB desensitization input power 1 dB input compression point half IF spurious rejection (fRF = fLO + 0.5fIF) 3rd order intercept point referenced to the RF input overall noise figure
- -20 - -25 60 -21.5
0.2 -15 -30 -23.0 - -15
0.5 -10 - - - -
dB mdB/K dBm dBm dB dBm
1997 Jan 27
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Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
SYMBOL PARAMETER CONDITIONS MIN.
UAA2073AM
TYP. - 80 2
MAX.
UNIT
Local oscillator section (RXON or TXON or SXON = 1) fiLO RiLO CiLO LO input frequency LO input resistance (real part of the parallel input impedance) LO input capacitance (imaginary part of the parallel input impedance) return loss on matched input (including power-down mode) balanced; at 767.5 MHz balanced; at 767.5 MHz 750 - - 785 - - MHz pF
RLiLO RLiLO PiLO RILO
note 2
10 - -7
15 20 -4 -
- - 0 -
dB mU dBm dB
return loss variation between SX, linear S11 variation; note 1 SRX and STX modes LO input power level reverse isolation LOIN to RFIN at LO frequency; note 2
40
Transmit section (transmit section on) ZoTX ZLTX CLTX RiTX TX IF output impedance TX IF load impedance TX IF load capacitance TX RF input resistance (real part of the parallel input impedance) TX RF input capacitance (imaginary part of the parallel input impedance) TX input frequency return loss on matched TX input conversion power gain TX output frequency 1 dB input compression point 2nd order intercept point 3rd order intercept point noise figure reverse isolation isolation double sideband; notes 2 and 3 TXIN to LOIN; note 2 LOIN to TXIN; note 2 note 1 note 1 from 200 to 1 k output; note 2 balanced; at 897.5 MHz - - - - - 1 - 200 200 - 2 - k pF
CiTX
balanced; at 897.5 MHz
-
1
-
pF
fiTX RLiTX GCPTX foTX CP1TX IP2TX IP3TX NFTX RITX ITX Timing tstart Notes
880 15 5 40 -22 - -12 - 40 40
- 20 7.4 - -17.5 +20 -9 9.8 - -
915 - 10 200 - - - 12 - -
MHz dB dB MHz dBm dBm dBm dB dB dB s
start-up time of each block
1
5
20
1. Measured and guaranteed only on Philips UAA2073AM demonstration board at Tamb = 25 C. 2. Measured and guaranteed only on Philips UAA2073AM demonstration board. 3. This value includes printed-circuit board and balun losses on Philips UAA2073AM demonstration board over full temperature range. 1997 Jan 27 10
Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
INTERNAL PIN CONFIGURATION PIN 1 10 11 12 4 15 7 16 5 SYMBOL SBS SXON
1
UAA2073AM
DC VOLTAGE (V)
EQUIVALENT CIRCUIT
VCC
RXON
GND
TXON VCC1 VCC2 GND1 GND2 RFINA +3.75 +3.75 0 0 +2.2
MBH682
VCC
6
RFINB
+2.2
8
TXINA
+2.4
5, 8
6, 9
9
TXINB
+2.4
GND
MBH683
13
TXOIFB
+1.9
VCC
14
TXOIFA
+1.9
13, 14
GND
MBH684
1997 Jan 27
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Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
DC VOLTAGE (V) +2.5
UAA2073AM
PIN 17
SYMBOL LOINB
EQUIVALENT CIRCUIT
VCC
18
LOINA
+2.5
17
18
GND
MBH685
19
IFB
+3.0
VCC
19
20
20
IFA
+3.0
GND
GND
MBH686
1997 Jan 27
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UAA2073AM
Product specification
Fig.6 Philips demonstration board diagram.
handbook, full pagewidth
1997 Jan 27
C17 C33 8.2 pF 3.9 pF C19 220 pF IFB 3.9 pF C18 1 L8 12 nH C12 27 pF C11 27 pF 27 pF C10 3.3 pF C15 7 R1 180 R2 180 8 9 10 11 12 13 14 C13 390 pF C14 390 pF C32 6.8 pF SXON 2 2 RXON TXON C31 6.8 pF L13 180 nH TXOIF 40 to 200 MHz L14 180 nH C9 3.3 pF L7 12 nH L9 22 nH VCC 2 VCC C24 1 nF 4 5 16 L1 18 nH 17 C23 27 pF 3 18 19 20 L15 100 nH C34 8.2 pF IFO 175 MHz IFA L16 100 nH R3 680 VCC SBS R4 680 L12 120 nH L11 120 nH
Philips Semiconductors
APPLICATION INFORMATION
Image rejecting front-end for GSM applications
C20 27 pF
R5 680 k
L2
15 nH
C2
LOIN 750 to 785 MHz
C3 1.5 pF
RFIN 925 to 960 MHz 6 15
L3
15 nH
27 pF C4
UAA2073AM
13
L6 27 nH 2 1 C28 VCC 120 pF C26 27 pF 1 1 R9 680 k C25 27 pF R8 680 k C27 27 pF R10 680 k
27 pF
C1 1.5 pF L5 15 nH
C8
C5 1.8 pF
27 pF
TXIN 880 to 915 MHz
L4
15 nH
C7
27 pF
C6 1.8 pF
MGD151
Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
Table 2 UAA2073AM demonstration board parts list PART Resistors R1 R2 R3 R4 R5 R8 R9 R10 Capacitors C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C17 C18 C19 C20 C23 C24 C25 C26 C27 C28 C31 C32 C33 C34 1.5 pF 27 pF 1.5 pF 27 pF 1.8 pF 1.8 pF 27 pF 27 pF 3.3 pF 3.3 pF 27 pF 27 pF 390 pF 390 pF 27 pF 3.9 pF 3.9 pF 220 pF 27 pF 27 pF 1 nF 27 pF 27 pF 27 pF 120 pF 6.8 pF 6.8 pF 8.2 pF 8.2 pF 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 RFIN RFIN RFIN RFIN TXIN TXIN TXIN TXIN LOIN LOIN LOIN LOIN TXOIF TXOIF VCCLO IFO IFO IF/VCC SBS VCCLNA VCCLNA RXON SXON TXON VCC TXOIF TXOIF IFO IFO 180 180 680 680 680 k 680 k 680 k 680 k 0805 0805 0805 0805 0805 0805 0805 0805 TXOIF TXOIF IFO IFO SBS RXON SXON TXON VALUE SIZE LOCATION PART Inductors L1 L2 L3 L4 L5 L6 L7 L8 L9 L11 L12 L13 L14 L15 L16 Other components COMPONENT IC1 SMA/RIM SMB Component manufacturers 18 nH 15 nH 15 nH 15 nH 15 nH 27 nH 12 nH 12 nH 22 nH 120 nH 120 nH 180 nH 180 nH 100 nH 100 nH VALUE
UAA2073AM
SIZE
LOCATION
0805 0805 0805 0805 0805 0805 0805 0805 0805 1008 1008 0805 0805 1008 1008
RFIN RFIN RFIN TXIN TXIN TXIN LOIN LOIN LOIN IFO IFO TXOIF TXOIF IFO IFO
DESCRIPTIONS UAA2073AM sockets for RF and IF inputs/outputs VCC socket
All surface mounted resistors and capacitors are from Philips Components. The small value capacitors are multilayer ceramic with NPO dielectric. The inductors are from Coilcraft UK.
1997 Jan 27
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Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
PACKAGE OUTLINE SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
UAA2073AM
SOT266-1
D
E
A X
c y HE vM A
Z
20
11
Q A2 pin 1 index A1 (A 3) Lp L A
1
e bp
10
detail X wM
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.5 A1 0.15 0 A2 1.4 1.2 A3 0.25 bp 0.32 0.20 c 0.20 0.13 D (1) 6.6 6.4 E (1) 4.5 4.3 e 0.65 HE 6.6 6.2 L 1.0 Lp 0.75 0.45 Q 0.65 0.45 v 0.2 w 0.13 y 0.1 Z (1) 0.48 0.18 10 0o
o
Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT266-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 90-04-05 95-02-25
1997 Jan 27
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Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices.
UAA2073AM
If wave soldering cannot be avoided, the following conditions must be observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1997 Jan 27
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Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
UAA2073AM
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
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Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
NOTES
UAA2073AM
1997 Jan 27
18
Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
NOTES
UAA2073AM
1997 Jan 27
19
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580/xxx France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
437027/1200/02/pp20
Date of release: 1997 Jan 27
Document order number:
9397 750 01642

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